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Small Signal Transistor Arrays
UNA0233
Silicon PNP epitaxial planar transistor (3 elements) Silicon NPN epitaxial planar transistor (3 elements)
Unit: mm
For motor drives Features
* Small and lightweight * Low power consumption * Low voltage drive * With 6 elements incorporated
0.40.1 14 13 12 11 10 9 8 12 5.50.3 7.70.3 12 3 4567 0.90.1 0.8 1.50.1 1.5+0.2 -0.1 0.5 45 0.2+0.1 -0.0
Absolute Maximum Ratings Ta = 25C
Parameter PNP Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Peak collector current NPN Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Overall Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO IC ICP VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -10 -10 - 0.5 -1 10 10 7 0.5 1 0.5 150 -55 to +150 Unit V V A A V V V A A W C C
1: Collector 2: Base 3: Collector 4: Base 12
6.50.3
5: Collector 6: Base 7: Emitter 8: Collector
9: Base 13: Base 10: Collector 14: Emitter 11: Base 12: Collector
SO14-G1 Package
Marking Symbol: UN233 Internal Connection
14 13 12 11 10 9 8
1234567
Note) *: When the dissipation on one device is TC = 25C
0.50.2
Publication date: April 2003
SJK00052BED
1
UNA0233
Electrical Characteristics Ta = 25C 3C
* PNP
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO hFE VCE(sat) fT Cob Conditions IC = -10 A, IE = 0 IC = -1 mA, IB = 0 VCE = -2 V, IC = - 100 mA IC = -1 A, IB = -25 mA VCB = -6 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz 190 65 Min -10 -10 200 450 - 0.4 Typ Max Unit V V V MHz pF
* NPN
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Forward voltage *2
*1
Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) fT Cob VF
Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 7 V, IE = 0 VCE = 2 V, IC = 200 mA IC = 1 A, IB = 25 mA VCB = 6 V, IE = -50 mA, f = 200 MHz VCB = 6 V, IE = 0, f = 1 MHz IF = 0.5 A
Min 10 10 7
Typ
Max
Unit V V V A V MHz pF
1 200 800 0.4 120 25 1.3
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Application to the built-in diode
2
SJK00052BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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